C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
2. High breakdown GaN HEMT with overlapping gate structure
3. Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
4. A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation
5. AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
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