Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs-Reference-Cited by-同舟云学术

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

Published:2022-12-08 Issue:12 Volume:4 Page:5984-5995
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yuan Chao¹^ORCID,Meng Biwei¹,Mao Yali¹,Wu Mei²,Jia Fuchun²,Yang Ling²,Ma Xiaohua²,Hao Yue²

Affiliation:

1. The Institute of Technological Sciences, Wuhan University, Wuhan430072, China

2. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an710071, People’s Republic of China

Funder

Science and Technology Department of Hubei Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01163

Reference60 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. GaN-Based RF Power Devices and Amplifiers

4. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

5. Effect of C- and Fe-doped GaN buffer on AlGaN/GaN high electron mobility transistor performance on GaN substrate using side-gate modulation

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