The effect of iron and carbon-related bulk traps on static I-V characteristics of p-GaN HEMTS
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0182981
Reference20 articles.
1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
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3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
4. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
5. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
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