Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h-Reference-Cited by-同舟云学术

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Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h

Published:1999-08-01 Issue:Part 2, No. 8A Volume:38 Page:L851-L853
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoshida Seikoh,Suzuki Joe

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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