Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C-Reference-Cited by-同舟云学术

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Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

Published:1995-02-27 Issue:9 Volume:66 Page:1083-1085
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khan M. Asif,Shur Michael S.,Kuznia John N.,Chen Q.,Burm Jin,Schaff William

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113579

Reference6 articles.

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