Atomic-structure changes of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mn>30</mml:mn><mml:mo>∘</mml:mo></mml:msup></mml:math> partial-dislocation cores due to excess carriers in GaP-Reference-Cited by-同舟云学术

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Atomic-structure changes of 30∘ partial-dislocation cores due to excess carriers in GaP

Published:2024-09-12 Issue:9 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Hoshino Sena¹^ORCID,Oi Shuji¹,Ogura Yu¹,Yokoi Tatsuya¹,Li Yan²^ORCID,Nakamura Atsutomo²³,Matsunaga Katsuyuki¹⁴^ORCID

Affiliation:

1. Nagoya University

2. Osaka University

3. Japan Science and Technology Agency

4. Japan Fine Ceramics Center

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Corporation

Kyosho Hatta Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.093605/fulltext

Reference49 articles.

1. The 2018 GaN power electronics roadmap

2. Mechanical properties of undoped GaAs. Part I: Yield stress measurements

3. Photostimulated enhancement of dislocation glide in gallium arsenide crystals

4. Photoplastic effect and Vickers microhardness in III–V and II–VI semiconductor compounds

5. Mechanical properties and photomechanical effect in GaP single crystals

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