Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00542-024-05742-8.pdf
Reference25 articles.
1. Amarnath G, Swain R, Lenka TR (2018) Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT. Int J Numer Model 31(1):2268
2. Amarnath G, Panda DK, Lenka TR (2019) Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths. Int J Numer Model 32:2456
3. Ambacher O, Smartet JR et al (1999) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures. J Appl Phys 85(6):3222–3233
4. Ambacher O, Foutz B, Smart J, Shealy JR et al (2000) Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys 87(1):334–344
5. Ambacher O, Majewski J, Miskys C, Link A et al (2002) Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J Phys Condens Matter 14:3399–3434
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