Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Published:1999-03-15 Issue:6 Volume:85 Page:3222-3233
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ambacher O.,Smart J.,Shealy J. R.,Weimann N. G.,Chu K.,Murphy M.,Schaff W. J.,Eastman L. F.,Dimitrov R.,Wittmer L.,Stutzmann M.,Rieger W.,Hilsenbeck J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369664

Reference64 articles.

1. High transconductance-normally-off GaN MODFETs

2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

3. AlGaN/GaN HEMTs grown on SiC substrates

4. High-temperature performance of AlGaN/GaN HFETs on SiC substrates

5. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Cited by 2435 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study on thermal transport properties of GaN under different cross-plane strain;International Journal of Heat and Mass Transfer;2024-11

2. Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption;Applied Surface Science;2024-11

3. Space-confined synthesis of two-dimensional InP crystals for high-performance self-powered Schottky photodiode;Applied Materials Today;2024-10

4. Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device;physica status solidi (b);2024-09-09

5. Process-induced stress tuning to improve linearity performance in AlGaN/GaN HEMTs with SiNx passivation;Physica Scripta;2024-09-06