Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Published:2000-01 Issue:1 Volume:87 Page:334-344
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ambacher O.,Foutz B.,Smart J.,Shealy J. R.,Weimann N. G.,Chu K.,Murphy M.,Sierakowski A. J.,Schaff W. J.,Eastman L. F.,Dimitrov R.,Mitchell A.,Stutzmann M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371866

Reference57 articles.

1. Growth and applications of Group III-nitrides

2. High transconductance-normally-off GaN MODFETs

3. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

4. AlGaN/GaN HEMTs grown on SiC substrates

5. High-temperature performance of AlGaN/GaN HFETs on SiC substrates

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