Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes

Published:2024-08 Issue:4 Volume:16 Page:1-7
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Hofmann Gregor¹,Muhin Anton²^ORCID,Susilo Norman²^ORCID,Römer Friedhard¹^ORCID,Wernicke Tim²,Kneissl Michael²^ORCID,Witzigmann Bernd¹^ORCID

Affiliation:

1. Department EEI, Lehrstuhl für Optoelektronik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany

2. Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany

Funder

Leibniz Association joint project UVSimTech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/4563994/10552336/10602746.pdf?arnumber=10602746

Reference38 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

3. The 2020 UV emitter roadmap

4. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities

5. Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements;Applied Physics Letters;2024-08-12

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