Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures

Published:2024-08 Issue: Volume:178 Page:108460
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Hongxin,Huang Huamao,Wang Kai,Xie Zijing,Wang Hong

Publisher

Elsevier BV

Reference34 articles.

1. AlGaN/GaN high electron mobility transistor for various sensing applications: a review;Bhat;Micro and Nanostructures,2023

2. The 2018 GaN power electronics roadmap;Amano;J. Phys. Appl. Phys.,2018

3. GaN-on-Si power Technology: devices and applications;Chen;IEEE Trans. Electron. Dev.,2017

4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,2000

5. Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression;He;Chin. Phys. B,2015

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