Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT
Author:
Affiliation:
1. Department of Electronics and Communication Engineering; National Institute of Technology Silchar; Assam India
2. Department of Electronics and Telecommunication Engineering; Parala Maharaja Engineering College; Odisha India
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Reference25 articles.
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2. High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric;Zhou;IEEE Electron Device Letters,2016
3. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz;Yue;IEEE Electron Device Letters,2012
4. Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT;Jena;J Korean Phys Soc,2015
5. Analytical modeling of capacitances for GaN HEMTs including parasitic components;Zhang;IEEE Transactions on Electron Devices,2014
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