Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components-Reference-Cited by-同舟云学术

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Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Published:2014-03 Issue:3 Volume:61 Page:755-761
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Aixi,Zhang Lining,Tang Zhikai,Cheng Xiaoxu,Wang Yan,Chen Kevin J.,Chan Mansun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6746059/06716042.pdf?arnumber=6716042

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Deep Cutoff Capacitance Model for GaN Switch HEMTs;IEEE Transactions on Electron Devices;2024-09

2. Double π-gate AlGaN/GaN HEMT with reduced surface and buffer traps and enhanced reliability;Microelectronics Reliability;2024-08

3. HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability;2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET);2024-03-21

5. Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout;Semiconductor Science and Technology;2024-03-08

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