HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications-Reference-Cited by-同舟云学术

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HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications

Published:2024-04-14 Issue: Volume:51.16 Page:2C.4-1-2C.4-6
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Lin Y.S.¹,Yang Cheng Hsun¹,Wang C.H.¹,Sou K.P.¹,Yang Cheng Hong¹,Shih M.C.¹,Hung W.S.¹,Chuang W. H.¹,Ciou F.M.²,Chiu P. C.²,Hsu C.C.²,Chen C.F.²,Kuo D.M.³

Affiliation:

1. Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan

2. Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan

3. Taiwan Semiconductor Manufacturing Co., Ltd.,Process Integration Engineering,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529485.pdf?arnumber=10529485

Reference20 articles.

1. Stability, Reliability, and Robustness of GaN Power Devices: A Review

2. GaN-based power devices: Physics, reliability, and perspectives

3. GaN FinFETs and trigate devices for power and RF applications: review and perspective

4. The 2018 GaN power electronics roadmap;Hiroshi;Journal of Physics D: Applied Physics,2018

5. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

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