Stability, Reliability, and Robustness of GaN Power Devices: A Review-Reference-Cited by-同舟云学术

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Published:2023-07 Issue:7 Volume:38 Page:8442-8471
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Kozak Joseph Peter¹^ORCID,Zhang Ruizhe¹^ORCID,Porter Matthew¹^ORCID,Song Qihao¹^ORCID,Liu Jingcun¹^ORCID,Wang Bixuan¹^ORCID,Wang Rudy²,Saito Wataru³^ORCID,Zhang Yuhao¹^ORCID

Affiliation:

1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Milan Power Electronics Laboratory, Delta Electronics (Americas), Ltd., Durham, NC, USA

3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan

Funder

Center for Power Electronics Systems Industry Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10130046/10098926.pdf?arnumber=10098926

Reference285 articles.

1. New Circuit Topology for System-Level Reliability of GaN

2. Progressive breakdown in high-voltage GaN MIS-HEMTs

3. Quality & reliability,2023

4. Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

5. Review of Loss Distribution, Analysis, and Measurement Techniques for GaN HEMTs

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