New Circuit Topology for System-Level Reliability of GaN-Reference-Cited by-同舟云学术

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New Circuit Topology for System-Level Reliability of GaN

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Lin Ming-Cheng,Chang Wen-Che,Wu Haw-Yun,Lansbergen Gabriel Petrus,Kwan Man-Ho,Yu Jiun-Lei,Wu Cheng-Pao,Tsai Chun-Lin,Tuan Hsiao-Chin,Kalnitsky Alex

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757683.pdf?arnumber=8757683

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of dynamic ron stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs;Microelectronics Journal;2023-12

2. Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation;Results in Physics;2023-10

3. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

4. Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs;IEEE Transactions on Power Electronics;2023-07

5. Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations;Microelectronics Reliability;2023-06

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