Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs-Reference-Cited by-同舟云学术

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Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Published:2024-11 Issue:11 Volume:39 Page:14295-14303
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zagni Nicolò¹^ORCID,Fregolent Manuel²^ORCID,Verzellesi Giovanni³^ORCID,Bergamin Francesco²,Favero Davide²^ORCID,De Santi Carlo²^ORCID,Meneghesso Gaudenzio²^ORCID,Zanoni Enrico²^ORCID,Huber Christian⁴^ORCID,Meneghini Matteo²^ORCID,Pavan Paolo¹^ORCID

Affiliation:

1. Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, Italy

2. Department of Information Engineering, University of Padova, Padova, Italy

3. Department of Sciences and Methods for Engineering (DISMI), Italy

4. Advanced Technologies and Micro Systems Department, Robert Bosch GmbH, Renningen, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/63/10679334/10634782.pdf?arnumber=10634782

Reference33 articles.

1. Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

2. GaN-based power devices: Physics, reliability, and perspectives

3. 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

4. 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

5. Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes

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