A Deep Cutoff Capacitance Model for GaN Switch HEMTs-Reference-Cited by-同舟云学术

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A Deep Cutoff Capacitance Model for GaN Switch HEMTs

Published:2024-09 Issue:9 Volume:71 Page:5264-5269
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Lei¹,Mao Shuman¹^ORCID,Tang Min²^ORCID,Xu Yuehang¹^ORCID

Affiliation:

1. School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

2. Key Laboratory of Ministry of Education of China for Research of Design and Electromagnetic Compatibility of High-Speed Electronic Systems, Shanghai Jiao Tong University, Shanghai, China

Funder

National Natural Science Foundation of China

Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10606301.pdf?arnumber=10606301

Reference29 articles.

1. A 68-dB Isolation 1.0-dB Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network

2. A Small-Size K-Band SPDT Switch Using Alternate CMOS Structure With Resonating Inductor Matching

3. Miniaturized, Ultra-Wideband and High Isolation Single Pole Double Throw Switch by Using π-Type Topology in GaAs pHEMT Technology

4. Method to reduce control voltage for high power GaN RF switches

5. RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications

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