Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122305
Reference18 articles.
1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
4. AlGaN/GaN HEMTs grown on SiC substrates
5. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
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3. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor;Chinese Physics B;2015-09-29
4. The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs;IEEE Transactions on Electron Devices;2015-08
5. Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors;Superlattices and Microstructures;2015-08
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