Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/10/105201/pdf
Reference14 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
3. GaN microwave electronics
4. Very-high power density AlGaN/GaN HEMTs
5. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
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2. Enhancement of Magnetic Properties and High-Frequency Inductance in the Bi-Layered FeN-FeNHf Thin Films;Journal of Superconductivity and Novel Magnetism;2021-10-15
3. High speed terahertz modulator based on the single channel AlGaN/GaN high electron mobility transistor;Solid-State Electronics;2018-08
4. Electromagnetic resonance in the asymmetric terahertz metamaterials with triangle microstructure;Optics Communications;2018-05
5. Enhancement of the electromagnetic energy in the asymmetric split rings with compensated microstructures;Optical and Quantum Electronics;2018-03-17
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