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High speed terahertz modulator based on the single channel AlGaN/GaN high electron mobility transistor

  • Published:2018-08 Issue: Volume:146 Page:9-12
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Zhang Xiaoyu,Xing Yuanyuan,Zhang Qiang,Gu Yanping,Su Yao,Ma Chunlan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Versatile platform for electrically reconfigurable THz devices based on silicon Schottky-metasurfaces;Journal of the Optical Society of America B;2024-07-09

2. Device Performance Analysis for Different Gate Locations in AlGaN/GaN HEMT by Silvaco Simulation;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

3. Binary THz modulator based on silicon Schottky-metasurface;Scientific Reports;2022-11-07

4. A 170-GHz Modulator Based on Doule Schottky Diodes with Differential-Feed Technique;2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz);2021-08-29

5. Giant low-field tunability of THz transmission in patterned magnetic split-ring metastructures;Optics Express;2020-10-26
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