Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors-Reference-Cited by-同舟云学术

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Published:1996-07 Issue:7 Volume:17 Page:325-327
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Khan M.A.,Chen Q.,Yang J.W.,Shur M.S.,Dermott B.T.,Higgins J.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/11030/00506356.pdf?arnumber=506356

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