Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with different GaN channel layers grown on AlN buffer layer are fabricated and investigated in order to optimize the device performances and to study the noise properties. To investigate the strain effect of the GaN channel layer grown on the AlN buffer layer, the positive shift of Raman peak is observed as the GaN channel becomes thinner. The threshold voltages (Vth) of the fabricated devices shift to positive direction according to the decreased GaN channel layer due to the decreased 2‐dimensional electron gas (2DEG) and deteriorated crystal quality of GaN channel layer. All devices demonstrated 1/f noise properties and the dominance of the carrier number fluctuations (CNF) noise mechanism. The largest trap density (Nt) value in the narrowest GaN channel device is because of the degraded crystal quality and the enhanced strain effect of the GaN channel layer. However, the lowest noise levels at the drain current (Id) > 10−6 A for the device with the GaN channel thickness of 30 nm grown on AlN buffer layer are observed to be due to the fully depleted GaN channel layer although its poor crystal quality.