Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT-Reference-Cited by-同舟云学术

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Published:2019-11-06 Issue:12 Volume:58 Page:121003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Uiho^ORCID,Lee Kyeongjae,Kwak Taemyung,Jung Donghyeop,Jang Taehoon,Nam Yongjun,So Byeongchan,Kim Hyun-Seop,Cha Ho-Young,Kang Myoung-Jin,Seo Kwang-Seok,Nam Okhyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab4df3/pdf

Reference21 articles.

1. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

2. AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers

3. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

4. Strained GaN quantum-well FETs on single crystal bulk AlN substrates

5. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer;physica status solidi (a);2024-07-08

2. Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz;physica status solidi (a);2023-06

3. Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure;Solid-State Electronics;2023-01

4. On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer;Applied Physics Letters;2022-01-03

5. The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor;physica status solidi (a);2019-12-04