Strained GaN quantum-well FETs on single crystal bulk AlN substrates-Reference-Cited by-同舟云学术

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Published:2017-02-06 Issue:6 Volume:110 Page:063501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Qi Meng¹^ORCID,Li Guowang¹,Ganguly Satyaki¹,Zhao Pei¹,Yan Xiaodong¹^ORCID,Verma Jai¹,Song Bo²,Zhu Mingda²,Nomoto Kazuki²,Xing Huili (Grace)¹²³,Jena Debdeep¹²³

Affiliation:

1. Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

2. Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

3. Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4975702

Reference19 articles.

1. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

3. Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

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