Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors-Reference-Cited by-同舟云学术

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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

Published:2016-04-05 Issue:6 Volume:31 Page:065002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zervos Ch,Adikimenakis A,Bairamis A,Kostopoulos A,Kayambaki M,Tsagaraki K,Konstantinidis G,Georgakilas A

Funder

European Social Fund (ESF) and National Resources

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065002/pdf

Reference44 articles.

1. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

2. High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

3. High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

4. High electron mobility transistors based on the AlN/GaN heterojunction

5. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

2. Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz;physica status solidi (a);2023-06

3. Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT;IEEE Transactions on Electron Devices;2022-11

4. The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor;physica status solidi (a);2019-12-04

5. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire;physica status solidi (a);2019-12-04

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