High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736207
Reference21 articles.
1. AlGaN/AlN/GaN high-power microwave HEMT
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3. AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
4. Low interface state density AlN/GaN MISFETs
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