AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980464?crawler=true&mimetype=application/pdf
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4. Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors
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