Low interface state density AlN/GaN MISFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19991407?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. GaN Materials for High Power Microwave Amplifiers
3. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz
4. An InP MISFET with a power density of 1.8 W/mm at 30 GHz
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