Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz-Reference-Cited by-同舟云学术

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Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz

Published:1997 Issue:20 Volume:33 Page:1742
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Wu Y.-F.,Keller B.P.,Fini P.,Pusl J.,Le M.,Nguyen N.X.,Nguyen C.,Widman D.,Keller S.,Denbaars S.P.,Mishra U.K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19971127?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Measured microwave power performance of AlGaN/GaN MODFET

2. Microwave performance of AlGaN/GaN inverted MODFET's

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