GaN Materials for High Power Microwave Amplifiers-Reference-Cited by-同舟云学术

GaN Materials for High Power Microwave Amplifiers

Published:1998 Issue: Volume:512 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Eastman Lester F.,chu Kenneth,smart Joseph,Shealy J. Richard

Abstract

ABSTRACTThe key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for .15 μm gates reached 140 GHz, while .3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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2. 3. Mishra U. ; private communication.

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4. Scattering of electrons at threading dislocations in GaN

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