Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120597
Reference15 articles.
1. 75 Å GaN channel modulation doped field effect transistors
2. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors
3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
4. AlGaN-GaN heterostructure FETs with offset gate design
5. AlGaN/GaN HEMTs grown on SiC substrates
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2. Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures;Microelectronics Reliability;2009-09
3. Electroluminescence characterization of AlGaN/GaN HEMTs;physica status solidi (c);2009-06
4. Influence of GaN cap on robustness of AlGaN/GaN HEMTs;2009 IEEE International Reliability Physics Symposium;2009
5. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon;Applied Physics Letters;2005-03-21
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