Highly accurateGaN HEMTmodel based on theAngelovmodel with error compensation-Reference-Cited by-同舟云学术

Highly accurateGaN HEMTmodel based on theAngelovmodel with error compensation

Published:2020-07-14 Issue:11 Volume:62 Page:3505-3513
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Zhao Ziyue¹^ORCID,Lu Yang¹,Zhang Hengshuang¹,Yi Chupeng¹,Wang Yuchen¹,Ma Xiaohua¹,Hao Yue¹

Affiliation:

1. Key Laboratory for Wide Band‐Gap Semiconductor Materials and Devices Xidian University Xi'an China

Funder

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32497

Reference21 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. GaN Materials for High Power Microwave Amplifiers

3. GaN-Based RF Power Devices and Amplifiers

4. Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface

5. AngelovI ThorsellM KuylenstiernaD et al. Hybrid measurement‐based extraction of consistent large‐signal models for microwave FETs. Paper presented at: IEEE 2013 European Microwave Conference; 2013 pp. 267–270.

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