High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335390
Reference15 articles.
1. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs
4. Power electronics on InAlN/(In)GaN: Prospect for a record performance
5. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
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