Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Abstract

The InAlN/GaN HEMT has been identified as a promising alternative to conventional AlGaN/GaN HEMT due to its enhanced polarization effect contributing to higher 2DEG in the GaN channel. However, the InAlN barrier usually suffers from high leakage and therefore low breakdown voltage. In this paper, we propose an asymmetrical GaN HEMT structure which is composed of an InAlN barrier at the source side and an AlGaN barrier at the drain side. This novel device combines the advantages of high 2DEG density at the source side and low electrical-field crowding at the drain side. According to the TCAD simulation, the proposed asymmetric device exhibits better drain current and transconductance compared to AlGaN/GaN HEMT, and enhanced breakdown voltage compared to InAlN/GaN HEMT. The current collapse effects have also been evaluated from the process-related point of view. Possible higher interface traps related to the two-step epitaxial growth for the asymmetric structure fabrication will not exacerbate the current collapse and reliability.