Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density-Reference-Cited by-同舟云学术

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Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density

Published:2024-11 Issue: Volume:195 Page:207950
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Douara Abdelmalek,Rabehi Abdelaziz^ORCID,Guermoui Mawloud,Daha Rania,Tibermacine Imad Eddine

Publisher

Elsevier BV

Reference42 articles.

1. High power high frequency transistors: a material's perspective;Coffie,2020

2. Asymmetric GaN high electron mobility transistors design with InAlN barrier at source side and AlGaN barrier at drain side;Lv;Electronics,2024

3. Theoretical study of InAlN/GaN high electron mobility transistor (HEMT) with a polarization-graded AlGaN back-barrier layer;Gu;Electronics,2019

4. Emergence of high quality sputtered III-nitride semiconductors and devices;Izyumskaya;Semicond. Sci. Technol.,2019

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