RF Performance Augmentation Using DG-InAlN/GaN HEMT-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

RF Performance Augmentation Using DG-InAlN/GaN HEMT

Published:2024-09 Issue:9 Volume:71 Page:5289-5295
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumari Vandana¹^ORCID,Saxena Manoj²^ORCID,Gupta Mridula³^ORCID

Affiliation:

1. Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi, India

2. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

3. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

Funder

Department of Science and Technology-Science and Engineering Research Board (DST-SERB) Project

DBT Star College Laboratory at Deen Dayal Upadhyaya College, University of Delhi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10620300.pdf?arnumber=10620300

Reference35 articles.

1. 40-W/mm Double Field-plated GaN HEMTs

2. Over 74% efficiency, L-band 200W GaN-HEMT for space applications

3. Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

4. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

5. Status of the Emerging InAlN/GaN Power HEMT Technology

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP