Status of the Emerging InAlN/GaN Power HEMT Technology
Author:
Publisher
Bentham Science Publishers Ltd.
Subject
Electrical and Electronic Engineering
Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RF Performance Augmentation Using DG-InAlN/GaN HEMT;IEEE Transactions on Electron Devices;2024-09
2. The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges;Applied Physics Reviews;2024-09-01
3. Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects;Physica Scripta;2024-03-27
4. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09
5. Modulated Electric Field to Analyze Channel Coupling in InAlN/GaN Double-Channel HEMTs;2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT);2023-08-31
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