40-W/mm Double Field-plated GaN HEMTs-Reference-Cited by-同舟云学术

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40-W/mm Double Field-plated GaN HEMTs

Published:2006-06 Issue: Volume: Page:
ISSN:
Container-title:2006 64th Device Research Conference
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Author:

Wu Y.-f.,Moore M.,Saxler A.,Wisleder T.,Parikh P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4097500/4079456/04097579.pdf?arnumber=4097579

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF Performance Augmentation Using DG-InAlN/GaN HEMT;IEEE Transactions on Electron Devices;2024-09

2. Simulation investigation of effects of substrate and thermal boundary resistance on performances of AlGaN/GaN HEMTs;Physica Scripta;2024-05-24

3. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

4. 31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN_x Passivation;IEEE Electron Device Letters;2024-03

5. Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side;Electronics;2024-02-04

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