Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
Author:
Affiliation:
1. Institute for Sustainable Systems Engineering (INATECH), Albert-Ludwigs-University Freiburg, Emmy-Noether-Str. 2, D-79110 Freiburg, Germany
2. Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0049185
Reference62 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
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