On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture-Reference-Cited by-同舟云学术

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On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture

Published:2024-07 Issue:7 Volume:71 Page:4072-4078
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sehra Khushwant¹^ORCID,Chanchal ¹^ORCID,Malik Amit²^ORCID,Kumari Vandana³,Gupta Mridula¹^ORCID,Mishra Meena²,Rawal D. S.²^ORCID,Saxena Manoj⁴^ORCID

Affiliation:

1. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

2. Solid State Physics Laboratory, Defence Research and Development Organization, New Delhi, India

3. Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi, India

4. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

Funder

Defence Research & Development Organization (DRDO) Solid State Physics Laboratory (SSPL) CARS Project

Department of Science and Technology - Science and Engineering Research Board

Delhi University (DU) Institution of Eminence

Department of Biotechnology (DBT) Star Scheme at Deen Dayal Upadhyaya College, University of Delhi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10530472.pdf?arnumber=10530472

Reference23 articles.

1. High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications

2. High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

3. Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

4. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

5. Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

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