Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 90 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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