Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers

Author:

Ito Yoshikaze,Tamai Seita,Hoshi Takuya,Gotow Takahiro,Miyamoto YasuyukiORCID

Abstract

Abstract In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated properties such as sheet resistance R sh and transconductance gm. These were attributed to the surface oxidation of the AlGaN barrier, and the simulation results showed that the channel layer thickness changed the dependence of R sh on the trap level density; however, the calculated changes were smaller than the observed changes. In the range of gate lengths we produced, suppression of the short-channel effect by the back barrier layer was confirmed. However, no significant change in the channel layer thickness was observed.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

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