Design and Fabrication of Normally-on and Normally-off Ultrathin AlN-based Transistors
Author:
Affiliation:
1. National Research University of Electronic Technology,Chair of Quantum Physics and Nanoelectronics,Moscow,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10424006/10424023/10424056.pdf?arnumber=10424056
Reference5 articles.
1. Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
2. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
3. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions
4. Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
5. High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
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