Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire-Reference-Cited by-同舟云学术

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Published:2019-12-04 Issue:7 Volume:217 Page:1900695
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Choi Uiho¹,Kim Hyun-Seop²,Lee Kyeongjae¹,Jung Donghyeop¹,Kwak Taemyung¹,Jang Taehoon¹,Nam Yongjun¹,So Byeongchan¹,Kang Myoung-Jin³,Seo Kwang-Seok³,Han Min⁴,Choi Seokgyu⁴,Lee Sangmin⁴,Cha Ho-Young²,Nam Okhyun¹^ORCID

Affiliation:

1. Nano-Optical EngineeringKorea Polytechnic University (KPU) Siheung Gyeonggi 427-793 Republic of Korea

2. School of Electronic and Electrical EngineeringHongik University Seoul 04066 Republic of Korea

3. Department of Electrical and Computer Engineering Inter-university Semiconductor Research CenterSeoul National University Seoul 08826 Republic of Korea

4. WAVICE inc. 2/F 46, Samsung 1-ro 5-gil, Hwaseong-si Gyeonggi-do 18449 Republic of Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900695

Reference21 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Trapping effects in GaN and SiC microwave FETs

3. Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate

4. Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

5. InAlN/GaN HEMTs With AlGaN Back Barriers

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer;physica status solidi (a);2024-07-08

2. Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz;physica status solidi (a);2023-06

3. Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer;Applied Physics B;2023-05-24

4. Securing Multimedia Using a Deep Learning Based Chaotic Logistic Map;IEEE Journal of Biomedical and Health Informatics;2023-03

5. Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure;Solid-State Electronics;2023-01