Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates-Reference-Cited by-同舟云学术

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Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

Published:2017 Issue:11 Volume:6 Page:S3048-S3051
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lo Chien-Fong,Kao Chen-Kai,Laboutin Oleg,Marchand Hugues,Pelzel Rodney,Johnson Wayne

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference25 articles.

1. 100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz

2. Proton irradiation effects on AlN/GaN high electron mobility transistors

3. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

4. GaN: Processing, defects, and devices

5. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al_0.07Ga_0.93N back barrier layer;Semiconductor Science and Technology;2024-07-11

2. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire;physica status solidi (a);2019-12-04

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