Author:
Kalita Sanjib,Awadhiya Bhaskar,Changmai Papul
Abstract
AbstractIn this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.
Funder
Manipal Academy of Higher Education, Manipal
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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