AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2174847
Reference17 articles.
1. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
4. Properties of carbon-doped GaN
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