Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990957?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz
2. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
3. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
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