Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates-Reference-Cited by-同舟云学术

Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

Published:2022-01 Issue:1 Volume:69 Page:88-95
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ando Yuji^ORCID,Makisako Ryutaro,Takahashi Hidemasa^ORCID,Wakejima Akio^ORCID,Suda Jun^ORCID

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan “Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society” Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9664642/09615368.pdf?arnumber=9615368

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